4N35SM
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS W/BASE 6SMD
OPTOISO 4.17KV TRANS W/BASE 6SMD
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-SMD
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-SMD
Description
Description
The 4N35SM from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum current transfer ratio of 100% at IF = 10 mA, VCE = 10 V. This device is housed in a 6-pin surface-mounted package, making it suitable for various applications requiring electrical isolation.
The 4N35SM from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum current transfer ratio of 100% at IF = 10 mA, VCE = 10 V. This device is housed in a 6-pin surface-mounted package, making it suitable for various applications requiring electrical isolation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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