4N35
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 5.3KV TRANS W/BASE 6DIP
OPTOISO 5.3KV TRANS W/BASE 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 5300Vrms 1 Channel 6-DIP
Optoisolator Transistor with Base Output 5300Vrms 1 Channel 6-DIP
Description
Description
The 4N35 is a general-purpose optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers a minimum current transfer ratio of 100% at IF = 10 mA and VCE = 10 V, with an isolation voltage of 5300 Vrms. Packaged in a 6-pin DIP, it is suitable for applications requiring electrical isolation.
The 4N35 is a general-purpose optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers a minimum current transfer ratio of 100% at IF = 10 mA and VCE = 10 V, with an isolation voltage of 5300 Vrms. Packaged in a 6-pin DIP, it is suitable for applications requiring electrical isolation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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