4N25M
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Description
Description
The 4N25M is a general-purpose optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum current transfer ratio of 20% at IF = 10 mA, VCE = 10 V. Packaged in a 6-pin DIP, it is suitable for various applications requiring electrical isolation.
The 4N25M is a general-purpose optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers an isolation voltage of 4170 Vrms and a minimum current transfer ratio of 20% at IF = 10 mA, VCE = 10 V. Packaged in a 6-pin DIP, it is suitable for various applications requiring electrical isolation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Nicklas or one of our other skilled sales representatives. They'll help you find the right service option.C