30C02MH-TL-E
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 30V 0.7A 3MCPH
TRANS NPN 30V 0.7A 3MCPH
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 30 V 700 mA 540 MHz 600 mW surface-mounted 3-MCPH
Bipolar (BJT) Transistor NPN 30 V 700 mA 540 MHz 600 mW surface-mounted 3-MCPH
Description
Description
The 30C02MH-TL-E from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 30V and a continuous collector current rating of 700mA, this transistor operates effectively at frequencies up to 540MHz. It has a power dissipation capability of 600mW, making it suitable for compact surface-mounted designs. The 3-MCPH package ensures ease of integration into modern electronic circuits, providing reliable performance in demanding environments.
The 30C02MH-TL-E from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 30V and a continuous collector current rating of 700mA, this transistor operates effectively at frequencies up to 540MHz. It has a power dissipation capability of 600mW, making it suitable for compact surface-mounted designs. The 3-MCPH package ensures ease of integration into modern electronic circuits, providing reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Richard or one of our other skilled sales representatives. They'll help you find the right service option.C