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2SK880-GR(TE85L,F)

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
The TOSHIBA 2SK880-GR(TE85L,F) is suitable for audio frequency low noise amplifier applications in consumer electronics and telecommunications. Its high input impedance and low noise characteristics make it ideal for high-fidelity audio systems, ensuring minimal signal degradation and enhanced performance in audio applications.
Detailed specification
Detailed specification
TOSHIBA - 2SK880-GR(TE85L,F) - JFET Transistor, 50 V, 14 mA, 1.5 V, SOT-323, 3 Pin, 125 °C
TOSHIBA - 2SK880-GR(TE85L,F) - JFET Transistor, 50 V, 14 mA, 1.5 V, SOT-323, 3 Pin, 125 °C
Description
Description
The TOSHIBA 2SK880-GR(TE85L,F) is a Silicon N Channel Junction Type JFET Transistor designed for audio frequency low noise amplifier applications. It features a high forward transfer admittance of |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0, a low noise figure of NF = 1.0 dB (typ.), and a maximum gate-drain voltage of VGDS = −50 V. The device operates with a maximum drain current of 14 mA and a junction temperature of 125 °C, housed in a compact SOT-323 package.
The TOSHIBA 2SK880-GR(TE85L,F) is a Silicon N Channel Junction Type JFET Transistor designed for audio frequency low noise amplifier applications. It features a high forward transfer admittance of |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0, a low noise figure of NF = 1.0 dB (typ.), and a maximum gate-drain voltage of VGDS = −50 V. The device operates with a maximum drain current of 14 mA and a junction temperature of 125 °C, housed in a compact SOT-323 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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