2SK3812-ZP-E1-AZ
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MP-25LZP
MP-25LZP
Detailed specification
Detailed specification
N-Channel 60 V 110A (Tc) 1.5W (Ta), 213W (Tc) surface-mounted TO-263-3
N-Channel 60 V 110A (Tc) 1.5W (Ta), 213W (Tc) surface-mounted TO-263-3
Description
Description
The 2SK3812-ZP-E1-AZ is an N-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID(DC)) of ±110 A. It has a low on-state resistance (RDS(on)) of 2.8 mΩ at VGS = 10 V and ID = 55 A, making it suitable for efficient power management. The device is housed in a surface-mounted TO-263-3 package, with a total power dissipation of 213 W at Tc = 25°C.
The 2SK3812-ZP-E1-AZ is an N-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID(DC)) of ±110 A. It has a low on-state resistance (RDS(on)) of 2.8 mΩ at VGS = 10 V and ID = 55 A, making it suitable for efficient power management. The device is housed in a surface-mounted TO-263-3 package, with a total power dissipation of 213 W at Tc = 25°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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