2SK3812-ZP-E1-AZ
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MP-25LZP
MP-25LZP
Detailed specification
Detailed specification
N-Channel 60 V 110A (Tc) 1.5W (Ta), 213W (Tc) surface-mounted TO-263-3
N-Channel 60 V 110A (Tc) 1.5W (Ta), 213W (Tc) surface-mounted TO-263-3
Description
Description
The 2SK3812-ZP-E1-AZ is an N-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID(DC)) of ±110 A. It has a low on-state resistance (RDS(on)) of 2.8 mΩ at VGS = 10 V and ID = 55 A, making it suitable for efficient power management. The device is housed in a surface-mounted TO-263-3 package, with a total power dissipation of 213 W at Tc = 25°C.
The 2SK3812-ZP-E1-AZ is an N-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID(DC)) of ±110 A. It has a low on-state resistance (RDS(on)) of 2.8 mΩ at VGS = 10 V and ID = 55 A, making it suitable for efficient power management. The device is housed in a surface-mounted TO-263-3 package, with a total power dissipation of 213 W at Tc = 25°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Contact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.C