2SK3476(TE12L,Q)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans RF MOSFET N-CH 20V 3A 3-Pin PW-X T/R
Trans RF MOSFET N-CH 20V 3A 3-Pin PW-X T/R
Description
Description
The 2SK3476(TE12L,Q) from Toshiba is a high-performance N-channel RF MOSFET designed for applications requiring efficient switching and amplification. With a maximum drain-source voltage of 20V and a continuous drain current rating of 3A, this device is suitable for various RF applications. It features a compact 3-pin PW-X package, ensuring ease of integration into circuit designs. The MOSFET's low on-resistance (RDS(on)) contributes to reduced power loss and improved thermal performance, making it ideal for RF amplification and switching circuits.
The 2SK3476(TE12L,Q) from Toshiba is a high-performance N-channel RF MOSFET designed for applications requiring efficient switching and amplification. With a maximum drain-source voltage of 20V and a continuous drain current rating of 3A, this device is suitable for various RF applications. It features a compact 3-pin PW-X package, ensuring ease of integration into circuit designs. The MOSFET's low on-resistance (RDS(on)) contributes to reduced power loss and improved thermal performance, making it ideal for RF amplification and switching circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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