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2SK2225-80-E#T2

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
The 2SK2225-80-E#T2 is utilized in high-speed power switching applications across industrial and consumer electronics domains. Its high breakdown voltage and low on-state resistance (RDS(on)) make it ideal for power supply circuits, motor control, and other applications requiring efficient power management.
Specification
Specification
ABU / MOSFET
ABU / MOSFET
Detailed specification
Detailed specification
N-Channel 1500 V 2A (Ta) 50W (Tc) Through Hole TO-3PFM
N-Channel 1500 V 2A (Ta) 50W (Tc) Through Hole TO-3PFM
Description
Description
The 2SK2225-80-E#T2 is an N-Channel MOSFET designed for high-speed power switching applications. It features a high breakdown voltage of 1500 V, a maximum drain current of 2 A, and a channel dissipation of 50 W. The device is housed in a TO-3PFM package and exhibits low drive current requirements, making it suitable for various power management applications.
The 2SK2225-80-E#T2 is an N-Channel MOSFET designed for high-speed power switching applications. It features a high breakdown voltage of 1500 V, a maximum drain current of 2 A, and a channel dissipation of 50 W. The device is housed in a TO-3PFM package and exhibits low drive current requirements, making it suitable for various power management applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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