2SK209-Y(TE85L,F)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
JFET N-CH 50V 14MA SC59
JFET N-CH 50V 14MA SC59
Detailed specification
Detailed specification
JFET N-Channel 50 V 14 mA 150 mW surface-mounted SC-59
JFET N-Channel 50 V 14 mA 150 mW surface-mounted SC-59
Description
Description
The 2SK209-Y(TE85L,F) is a Silicon N-Channel Junction Type JFET designed for audio frequency low noise amplifier applications. It features a high forward transfer admittance of |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0, a low noise figure of NF = 1.0 dB (typ.) at VDS = 10 V, ID = 0.5 mA, and a maximum gate-drain voltage of VGDS = -50 V. The device is housed in a compact SC-59 package, with a maximum drain current of 14 mA and a power dissipation of 150 mW.
The 2SK209-Y(TE85L,F) is a Silicon N-Channel Junction Type JFET designed for audio frequency low noise amplifier applications. It features a high forward transfer admittance of |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0, a low noise figure of NF = 1.0 dB (typ.) at VDS = 10 V, ID = 0.5 mA, and a maximum gate-drain voltage of VGDS = -50 V. The device is housed in a compact SC-59 package, with a maximum drain current of 14 mA and a power dissipation of 150 mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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