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2SK209-GR(TE85L,F)

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
2SK209-GR(TE85L,F) is primarily used in audio frequency low noise amplifier applications. Its high forward transfer admittance of 15 mS and low input capacitance of 13 pF make it ideal for high-performance audio circuits. The device's small size and low noise characteristics are particularly beneficial in consumer electronics and telecommunications.
Specification
Specification
JFET N-CH 50V 14MA SC59
JFET N-CH 50V 14MA SC59
Detailed specification
Detailed specification
JFET N-Channel 50 V 14 mA 150 mW surface-mounted SC-59
JFET N-Channel 50 V 14 mA 150 mW surface-mounted SC-59
Description
Description
The 2SK209-GR(TE85L,F) is a Silicon N-Channel Junction Field Effect Transistor (JFET) designed for audio frequency low noise amplifier applications. It features a maximum gate-drain voltage of -50 V, a drain current of 14 mA, and a low noise figure of 1.0 dB at 1 kHz. The device is housed in a compact SC-59 surface mount package, making it suitable for space-constrained applications.
The 2SK209-GR(TE85L,F) is a Silicon N-Channel Junction Field Effect Transistor (JFET) designed for audio frequency low noise amplifier applications. It features a maximum gate-drain voltage of -50 V, a drain current of 14 mA, and a low noise figure of 1.0 dB at 1 kHz. The device is housed in a compact SC-59 surface mount package, making it suitable for space-constrained applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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