2SK1317-E
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 1500V 2.5A TO3P
MOSFET N-CH 1500V 2.5A TO3P
Detailed specification
Detailed specification
N-Channel 1500 V 2.5A (Ta) 100W (Tc) Through Hole TO-3P
N-Channel 1500 V 2.5A (Ta) 100W (Tc) Through Hole TO-3P
Description
Description
The 2SK1317-E is a Silicon N-Channel MOSFET designed for high-speed power switching applications. It features a high breakdown voltage of 1500 V and a maximum drain current of 2.5 A, with a channel dissipation capability of 100 W. The device is housed in a TO-3P package and is suitable for use in switching regulators, DC-DC converters, and motor drivers, ensuring low drive current and no secondary breakdown.
The 2SK1317-E is a Silicon N-Channel MOSFET designed for high-speed power switching applications. It features a high breakdown voltage of 1500 V and a maximum drain current of 2.5 A, with a channel dissipation capability of 100 W. The device is housed in a TO-3P package and is suitable for use in switching regulators, DC-DC converters, and motor drivers, ensuring low drive current and no secondary breakdown.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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