2SC5200N(S1,E,S)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 230V 15A TO3P
TRANS NPN 230V 15A TO3P
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(N)
Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(N)
Description
Description
The Toshiba 2SC5200N is a high-performance NPN bipolar transistor designed for power amplification applications. It features a maximum collector-emitter voltage (VCEO) of 230 V, a collector current rating of 15 A, and a power dissipation capability of 150 W. This transistor operates effectively at frequencies up to 30 MHz, making it suitable for high-fidelity audio frequency amplifier output stages.
The Toshiba 2SC5200N is a high-performance NPN bipolar transistor designed for power amplification applications. It features a maximum collector-emitter voltage (VCEO) of 230 V, a collector current rating of 15 A, and a power dissipation capability of 150 W. This transistor operates effectively at frequencies up to 30 MHz, making it suitable for high-fidelity audio frequency amplifier output stages.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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