2SC4213-B(TE85L,F)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans GP BJT NPN 20V 0.3A 100mW 3-Pin USM T/R
Trans GP BJT NPN 20V 0.3A 100mW 3-Pin USM T/R
Description
Description
The 2SC4213-B(TE85L,F) is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage (Vce) of 20V and can handle a collector current (Ic) of up to 0.3A, with a power dissipation of 100mW. This 3-pin USM package is suitable for surface mount applications, providing efficient thermal management and compact design. Its reliable performance makes it ideal for various electronic circuits requiring low to moderate power levels.
The 2SC4213-B(TE85L,F) is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage (Vce) of 20V and can handle a collector current (Ic) of up to 0.3A, with a power dissipation of 100mW. This 3-pin USM package is suitable for surface mount applications, providing efficient thermal management and compact design. Its reliable performance makes it ideal for various electronic circuits requiring low to moderate power levels.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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