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2SC4213-A(TE85L,F)

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
The Toshiba 2SC4213-A(TE85L,F) is primarily used in industrial and consumer electronics applications, particularly for muting and switching functions. Its high emitter-base voltage and low on-state resistance make it ideal for compact designs requiring efficient signal control and amplification in various electronic devices.
Specification
Specification
TRANS NPN 20V 0.3A SC70
TRANS NPN 20V 0.3A SC70
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 20 V 300 mA 30MHz 100 mW surface-mounted SC-70
Bipolar (BJT) Transistor NPN 20 V 300 mA 30MHz 100 mW surface-mounted SC-70
Description
Description
The Toshiba 2SC4213-A(TE85L,F) is a silicon NPN bipolar transistor designed for muting and switching applications. It features a collector-emitter voltage of 20 V, a collector current of 300 mA, and a transition frequency of 30 MHz. The device is housed in a compact SC-70 package, offering low on-state resistance (RON) of 1 Ω and high DC current gain ranging from 200 to 1200, making it suitable for various electronic circuits.
The Toshiba 2SC4213-A(TE85L,F) is a silicon NPN bipolar transistor designed for muting and switching applications. It features a collector-emitter voltage of 20 V, a collector current of 300 mA, and a transition frequency of 30 MHz. The device is housed in a compact SC-70 package, offering low on-state resistance (RON) of 1 Ω and high DC current gain ranging from 200 to 1200, making it suitable for various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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