2SC3265-O(TE85L,F)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans GP BJT NPN 25V 0.8A 200mW 3-Pin S-Mini
Trans GP BJT NPN 25V 0.8A 200mW 3-Pin S-Mini
Description
Description
The 2SC3265-O(TE85L,F) is a high-performance NPN bipolar junction transistor (BJT) manufactured by Toshiba. It is designed for general-purpose amplification and switching applications. This transistor operates with a maximum collector-emitter voltage (Vce) of 25V and a collector current (Ic) of 0.8A, with a power dissipation of 200mW. The device is housed in a compact 3-pin S-Mini package, making it suitable for space-constrained applications. Its reliable performance and efficiency make it ideal for various electronic circuits.
The 2SC3265-O(TE85L,F) is a high-performance NPN bipolar junction transistor (BJT) manufactured by Toshiba. It is designed for general-purpose amplification and switching applications. This transistor operates with a maximum collector-emitter voltage (Vce) of 25V and a collector current (Ic) of 0.8A, with a power dissipation of 200mW. The device is housed in a compact 3-pin S-Mini package, making it suitable for space-constrained applications. Its reliable performance and efficiency make it ideal for various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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