2SA2126-TL-E
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 50V 3A TP-FA
TRANS PNP 50V 3A TP-FA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 50 V 3 A 390MHz 800 mW Surface Mount TP-FA
Bipolar (BJT) Transistor PNP 50 V 3 A 390MHz 800 mW Surface Mount TP-FA
Description
Description
The 2SA2126-TL-E from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 50V and a continuous collector current rating of 3A, this transistor operates effectively at frequencies up to 390MHz. It has a power dissipation capability of 800 mW, making it suitable for compact designs. The device is housed in a TP-FA surface mount package, facilitating easy integration into modern electronic circuits.
The 2SA2126-TL-E from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 50V and a continuous collector current rating of 3A, this transistor operates effectively at frequencies up to 390MHz. It has a power dissipation capability of 800 mW, making it suitable for compact designs. The device is housed in a TP-FA surface mount package, facilitating easy integration into modern electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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