2SA2056(TE85L,F)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 50V 2A TSM
TRANS PNP 50V 2A TSM
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 50 V 2 A 625 mW surface-mounted TSM
Bipolar (BJT) Transistor PNP 50 V 2 A 625 mW surface-mounted TSM
Description
Description
The Toshiba 2SA2056 is a PNP bipolar junction transistor designed for high-speed switching applications. It features a maximum collector-emitter voltage of 50 V, a collector current rating of 2 A, and a power dissipation of 625 mW. With a high DC current gain (hFE) ranging from 200 to 500 and a low collector-emitter saturation voltage (VCE(sat)) of -0.2 V, it is suitable for DC-DC converters and strobe applications.
The Toshiba 2SA2056 is a PNP bipolar junction transistor designed for high-speed switching applications. It features a maximum collector-emitter voltage of 50 V, a collector current rating of 2 A, and a power dissipation of 625 mW. With a high DC current gain (hFE) ranging from 200 to 500 and a low collector-emitter saturation voltage (VCE(sat)) of -0.2 V, it is suitable for DC-DC converters and strobe applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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