2SA2029M3T5G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 50V 0.1A SOT723
TRANS PNP 50V 0.1A SOT723
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 50 V 100 mA 140 MHz 265 mW surface-mounted SOT-723
Bipolar (BJT) Transistor PNP 50 V 100 mA 140 MHz 265 mW surface-mounted SOT-723
Description
Description
The 2SA2029M3T5G is a PNP bipolar junction transistor designed for general-purpose amplifier applications. It operates at a collector-emitter voltage of 50 V and a collector current of 100 mA, with a power dissipation of 265 mW. Housed in a SOT-723 package, it features a high DC current gain (hFE) ranging from 210 to 460 and low saturation voltage (VCE(sat) < 0.5 V), making it suitable for low-power surface mount applications.
The 2SA2029M3T5G is a PNP bipolar junction transistor designed for general-purpose amplifier applications. It operates at a collector-emitter voltage of 50 V and a collector current of 100 mA, with a power dissipation of 265 mW. Housed in a SOT-723 package, it features a high DC current gain (hFE) ranging from 210 to 460 and low saturation voltage (VCE(sat) < 0.5 V), making it suitable for low-power surface mount applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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