2SA2016-TD-E
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 50V 7A PCP
TRANS PNP 50V 7A PCP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 50 V 7 A 330MHz 3.5 W surface-mounted PCP
Bipolar (BJT) Transistor PNP 50 V 7 A 330MHz 3.5 W surface-mounted PCP
Description
Description
The 2SA2016-TD-E from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 50V and a collector current rating of 7A, this transistor operates effectively at frequencies up to 330MHz. It has a power dissipation capability of 3.5W, making it suitable for power management tasks. The surface mount configuration allows for compact designs, enhancing thermal performance and reliability in electronic circuits.
The 2SA2016-TD-E from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 50V and a collector current rating of 7A, this transistor operates effectively at frequencies up to 330MHz. It has a power dissipation capability of 3.5W, making it suitable for power management tasks. The surface mount configuration allows for compact designs, enhancing thermal performance and reliability in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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