2SA2013-TD-E
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 50V 4A PCP
TRANS PNP 50V 4A PCP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 50 V 4 A 400MHz 3.5 W surface-mounted PCP
Bipolar (BJT) Transistor PNP 50 V 4 A 400MHz 3.5 W surface-mounted PCP
Description
Description
The 2SA2013-TD-E from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 50V and a continuous collector current rating of 4A, this transistor operates effectively at frequencies up to 400MHz. It is housed in a surface mount package, ensuring compact design and ease of integration into modern electronic circuits. The device can handle a power dissipation of 3.5W, making it suitable for power management applications.
The 2SA2013-TD-E from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 50V and a continuous collector current rating of 4A, this transistor operates effectively at frequencies up to 400MHz. It is housed in a surface mount package, ensuring compact design and ease of integration into modern electronic circuits. The device can handle a power dissipation of 3.5W, making it suitable for power management applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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