2SA1986-O(Q)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Sack
Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Sack
Description
Description
The Toshiba 2SA1986-O(Q) is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector-emitter voltage (Vce) of 230V and a continuous collector current (Ic) rating of 15A, making it suitable for high-voltage and high-current applications. With a power dissipation capability of 150000mW, this transistor is housed in a 3-pin TO-3PN package, which includes a tab for enhanced thermal management. Its robust design ensures reliability in demanding environments.
The Toshiba 2SA1986-O(Q) is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector-emitter voltage (Vce) of 230V and a continuous collector current (Ic) rating of 15A, making it suitable for high-voltage and high-current applications. With a power dissipation capability of 150000mW, this transistor is housed in a 3-pin TO-3PN package, which includes a tab for enhanced thermal management. Its robust design ensures reliability in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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