2SA1943N(S1,E,S)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 230V 15A TO3P
TRANS PNP 230V 15A TO3P
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(N)
Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(N)
Description
Description
The Toshiba 2SA1943N is a PNP bipolar transistor designed for high-power applications. It features a maximum collector-emitter voltage (VCEO) of -230 V, a collector current rating of 15 A, and a power dissipation capability of 150 W. This transistor operates at a frequency of 30 MHz and is housed in a TO-3P package, making it suitable for power amplifier stages in audio applications.
The Toshiba 2SA1943N is a PNP bipolar transistor designed for high-power applications. It features a maximum collector-emitter voltage (VCEO) of -230 V, a collector current rating of 15 A, and a power dissipation capability of 150 W. This transistor operates at a frequency of 30 MHz and is housed in a TO-3P package, making it suitable for power amplifier stages in audio applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Christian or one of our other skilled sales representatives. They'll help you find the right service option.C