2SA1587-GR,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
TOSHIBA - 2SA1587-GR,LF(T - Bipolar (BJT) Single Transistor, PNP, 120 V, 100 mA, 200 mW, SOT-323, surface-mounted.
TOSHIBA - 2SA1587-GR,LF(T - Bipolar (BJT) Single Transistor, PNP, 120 V, 100 mA, 200 mW, SOT-323, surface-mounted.
Description
Description
The TOSHIBA 2SA1587-GR,LF(T is a PNP bipolar junction transistor (BJT) designed for audio frequency general-purpose amplifier applications. It features a high voltage rating of VCEO = -120 V, a collector current of IC = -100 mA, and a power dissipation of 200 mW. The device is housed in a compact SOT-323 surface mount package, ensuring low noise operation with a typical noise figure of NF = 1 dB.
The TOSHIBA 2SA1587-GR,LF(T is a PNP bipolar junction transistor (BJT) designed for audio frequency general-purpose amplifier applications. It features a high voltage rating of VCEO = -120 V, a collector current of IC = -100 mA, and a power dissipation of 200 mW. The device is housed in a compact SOT-323 surface mount package, ensuring low noise operation with a typical noise figure of NF = 1 dB.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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