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2SA1419S-TD-E

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
2SA1419S-TD-E is suitable for industrial and consumer electronics applications, particularly in power management and signal amplification circuits. Its high breakdown voltage and current capacity make it ideal for use in compact, high-density hybrid integrated circuits, ensuring efficient operation in various electronic devices.
Specification
Specification
TRANS PNP 160V 1.5A PCP
TRANS PNP 160V 1.5A PCP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 160 V 1.5 A 120 MHz 500 mW surface-mounted PCP
Bipolar (BJT) Transistor PNP 160 V 1.5 A 120 MHz 500 mW surface-mounted PCP
Description
Description
The 2SA1419S-TD-E is a PNP bipolar transistor with a maximum collector-to-emitter voltage of 160V and a collector current rating of 1.5A. It features a gain-bandwidth product of 120 MHz and a collector dissipation of 500 mW. This surface-mounted device is designed for high-density applications, ensuring reliable performance in compact hybrid ICs.
The 2SA1419S-TD-E is a PNP bipolar transistor with a maximum collector-to-emitter voltage of 160V and a collector current rating of 1.5A. It features a gain-bandwidth product of 120 MHz and a collector dissipation of 500 mW. This surface-mounted device is designed for high-density applications, ensuring reliable performance in compact hybrid ICs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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