2SA1417S-TD-E
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 100V 2A PCP
TRANS PNP 100V 2A PCP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 100 V 2 A 120MHz 500 mW Surface Mount PCP
Bipolar (BJT) Transistor PNP 100 V 2 A 120MHz 500 mW Surface Mount PCP
Description
Description
The 2SA1417S-TD-E is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 2A, making it suitable for various power amplification tasks. With a transition frequency of 120MHz and a power dissipation capability of 500mW, this surface-mounted component is ideal for compact circuit designs. Its efficient thermal management and reliable switching characteristics enhance performance in demanding environments.
The 2SA1417S-TD-E is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 2A, making it suitable for various power amplification tasks. With a transition frequency of 120MHz and a power dissipation capability of 500mW, this surface-mounted component is ideal for compact circuit designs. Its efficient thermal management and reliable switching characteristics enhance performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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