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2SA1416T-TD-E

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
2SA1416T-TD-E is suitable for industrial and consumer electronics applications, particularly in power management and signal amplification circuits. Its high breakdown voltage and current capacity make it ideal for use in hybrid ICs and other compact electronic designs.
Specification
Specification
TRANS PNP 100V 1A PCP
TRANS PNP 100V 1A PCP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 100 V 1 A 120 MHz 500 mW surface-mounted PCP
Bipolar (BJT) Transistor PNP 100 V 1 A 120 MHz 500 mW surface-mounted PCP
Description
Description
The 2SA1416T-TD-E is a PNP bipolar transistor with a maximum collector-emitter voltage of 100 V and a collector current rating of 1 A. It features low VCE(sat) and operates at a frequency of up to 120 MHz. This surface-mounted device is designed for high-density applications, providing fast switching speeds and high breakdown voltage.
The 2SA1416T-TD-E is a PNP bipolar transistor with a maximum collector-emitter voltage of 100 V and a collector current rating of 1 A. It features low VCE(sat) and operates at a frequency of up to 120 MHz. This surface-mounted device is designed for high-density applications, providing fast switching speeds and high breakdown voltage.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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