2SA1416S-TD-E
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 100V 1A PCP
TRANS PNP 100V 1A PCP
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 100 V 1 A 120 MHz 500 mW surface-mounted PCP
Bipolar (BJT) Transistor PNP 100 V 1 A 120 MHz 500 mW surface-mounted PCP
Description
Description
The 2SA1416S-TD-E is a PNP bipolar transistor designed for high-performance applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 1 A, and a gain-bandwidth product of 120 MHz. This surface-mounted device is optimized for low VCE(sat) and fast switching speeds, making it suitable for compact hybrid IC designs.
The 2SA1416S-TD-E is a PNP bipolar transistor designed for high-performance applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 1 A, and a gain-bandwidth product of 120 MHz. This surface-mounted device is optimized for low VCE(sat) and fast switching speeds, making it suitable for compact hybrid IC designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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