2SA1201-Y(TE12L,ZC
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
PB-F POWER TRANSISTOR PW-MINI PD
PB-F POWER TRANSISTOR PW-MINI PD
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 120 V 800 mA 120MHz 500 mW surface-mounted PW-MINI
Bipolar (BJT) Transistor PNP 120 V 800 mA 120MHz 500 mW surface-mounted PW-MINI
Description
Description
The 2SA1201-Y is a PNP bipolar junction transistor designed for high voltage applications. It features a maximum collector-emitter voltage (VCEO) of -120 V, a collector current (IC) rating of -800 mA, and a transition frequency (fT) of 120 MHz. This surface-mounted device is suitable for power amplifier and voltage amplifier applications, with a power dissipation of 500 mW in a compact PW-MINI package.
The 2SA1201-Y is a PNP bipolar junction transistor designed for high voltage applications. It features a maximum collector-emitter voltage (VCEO) of -120 V, a collector current (IC) rating of -800 mA, and a transition frequency (fT) of 120 MHz. This surface-mounted device is suitable for power amplifier and voltage amplifier applications, with a power dissipation of 500 mW in a compact PW-MINI package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.C