2PD601ASW-QX
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
2PD601ASW-Q/SOT323/SC-70
2PD601ASW-Q/SOT323/SC-70
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 100 mA 100 MHz 200 mW surface-mounted SOT-323
Bipolar (BJT) Transistor NPN 50 V 100 mA 100 MHz 200 mW surface-mounted SOT-323
Description
Description
The 2PD601ASW-Q is a general-purpose NPN bipolar transistor designed for switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a transition frequency (fT) of 100 MHz. Packaged in a compact SOT-323 (SC-70) surface-mounted device, it is suitable for automotive applications and offers a total power dissipation of 200 mW.
The 2PD601ASW-Q is a general-purpose NPN bipolar transistor designed for switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a transition frequency (fT) of 100 MHz. Packaged in a compact SOT-323 (SC-70) surface-mounted device, it is suitable for automotive applications and offers a total power dissipation of 200 mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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