2PD601ASW,115
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NOW NEXPERIA 2PD601ASW - SMALL S
NOW NEXPERIA 2PD601ASW - SMALL S
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 100 mA 100 MHz 200 mW surface-mounted SOT-323
Bipolar (BJT) Transistor NPN 50 V 100 mA 100 MHz 200 mW surface-mounted SOT-323
Description
Description
The NXP 2PD601ASW is a small-signal NPN bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 50 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this surface-mounted device is ideal for compact circuit designs. Packaged in a SOT-323 form factor, it offers excellent thermal performance and reliability, making it suitable for various electronic applications.
The NXP 2PD601ASW is a small-signal NPN bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 50 V and can handle a collector current of up to 100 mA. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this surface-mounted device is ideal for compact circuit designs. Packaged in a SOT-323 form factor, it offers excellent thermal performance and reliability, making it suitable for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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