2PD601ART,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
2PD601 - 50 V, 100 MA UPN GENERA
2PD601 - 50 V, 100 MA UPN GENERA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 100 mA 100 MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor NPN 50 V 100 mA 100 MHz 250 mW surface-mounted TO-236AB
Description
Description
The 2PD601 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose applications. It operates with a maximum collector-emitter voltage of 50 V and a collector current of 100 mA, making it suitable for various switching and amplification tasks. With a transition frequency of 100 MHz and a power dissipation of 250 mW, this surface-mounted device is ideal for compact designs. Packaged in the TO-236AB form factor, it offers excellent thermal performance and reliability in electronic circuits.
The 2PD601 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose applications. It operates with a maximum collector-emitter voltage of 50 V and a collector current of 100 mA, making it suitable for various switching and amplification tasks. With a transition frequency of 100 MHz and a power dissipation of 250 mW, this surface-mounted device is ideal for compact designs. Packaged in the TO-236AB form factor, it offers excellent thermal performance and reliability in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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