2PD2150,115
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA 2PD2150 - POWER BIPOLAR
NEXPERIA 2PD2150 - POWER BIPOLAR
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 20 V 3 A 220MHz 2 W surface-mounted SOT-89
Bipolar (BJT) Transistor NPN 20 V 3 A 220MHz 2 W surface-mounted SOT-89
Description
Description
The NEXPERIA 2PD2150 is a high-performance NPN bipolar transistor designed for power applications. It operates with a maximum collector-emitter voltage of 20 V and can handle a collector current of up to 3 A, making it suitable for various switching and amplification tasks. With a transition frequency of 220 MHz and a power dissipation capability of 2 W, this surface-mounted device is ideal for compact designs. Packaged in a SOT-89 form factor, it ensures efficient thermal management and space-saving integration in electronic circuits.
The NEXPERIA 2PD2150 is a high-performance NPN bipolar transistor designed for power applications. It operates with a maximum collector-emitter voltage of 20 V and can handle a collector current of up to 3 A, making it suitable for various switching and amplification tasks. With a transition frequency of 220 MHz and a power dissipation capability of 2 W, this surface-mounted device is ideal for compact designs. Packaged in a SOT-89 form factor, it ensures efficient thermal management and space-saving integration in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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