2PB709ARW,115
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NOW NEXPERIA 2PB709ARW - SMALL S
NOW NEXPERIA 2PB709ARW - SMALL S
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 45 V 100 mA 70MHz 200 mW surface-mounted SOT-323
Bipolar (BJT) Transistor PNP 45 V 100 mA 70MHz 200 mW surface-mounted SOT-323
Description
Description
The NXP 2PB709ARW is a PNP bipolar junction transistor (BJT) designed for surface mount applications. It operates with a maximum collector-emitter voltage of 45 V and can handle a collector current of up to 100 mA. With a transition frequency of 70 MHz and a power dissipation of 200 mW, this transistor is suitable for high-frequency switching and amplification tasks. Packaged in a compact SOT-323 form factor, it is ideal for space-constrained designs in consumer electronics and communication devices.
The NXP 2PB709ARW is a PNP bipolar junction transistor (BJT) designed for surface mount applications. It operates with a maximum collector-emitter voltage of 45 V and can handle a collector current of up to 100 mA. With a transition frequency of 70 MHz and a power dissipation of 200 mW, this transistor is suitable for high-frequency switching and amplification tasks. Packaged in a compact SOT-323 form factor, it is ideal for space-constrained designs in consumer electronics and communication devices.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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