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2N7002WT1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
2N7002WT1G is suitable for automotive, consumer electronics, and portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones. Its low RDS(on) and ESD protection make it ideal for low-side load switches and DC-DC converters, ensuring reliable performance in various electronic circuits.
Specification
Specification
MOSFET N-CH 60V 310MA SC70-3
MOSFET N-CH 60V 310MA SC70-3
Detailed specification
Detailed specification
N-Channel 60 V 310mA (Ta) 280mW (Tj) surface-mounted SC-70-3 (SOT323)
N-Channel 60 V 310mA (Ta) 280mW (Tj) surface-mounted SC-70-3 (SOT323)
Description
Description
The 2N7002WT1G is an N-Channel MOSFET designed for low-side load switching and level shifting applications. It features a maximum drain-to-source voltage of 60 V, a continuous drain current of 310 mA, and a power dissipation of 280 mW. The device is housed in a compact SC-70-3 package, ensuring a small footprint for space-constrained applications.
The 2N7002WT1G is an N-Channel MOSFET designed for low-side load switching and level shifting applications. It features a maximum drain-to-source voltage of 60 V, a continuous drain current of 310 mA, and a power dissipation of 280 mW. The device is housed in a compact SC-70-3 package, ensuring a small footprint for space-constrained applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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