2N7002WT1G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 310MA SC70-3
MOSFET N-CH 60V 310MA SC70-3
Detailed specification
Detailed specification
N-Channel 60 V 310mA (Ta) 280mW (Tj) surface-mounted SC-70-3 (SOT323)
N-Channel 60 V 310mA (Ta) 280mW (Tj) surface-mounted SC-70-3 (SOT323)
Description
Description
The 2N7002WT1G is an N-Channel MOSFET designed for low-side load switching and level shifting applications. It features a maximum drain-to-source voltage of 60 V, a continuous drain current of 310 mA, and a power dissipation of 280 mW. The device is housed in a compact SC-70-3 package, ensuring a small footprint for space-constrained applications.
The 2N7002WT1G is an N-Channel MOSFET designed for low-side load switching and level shifting applications. It features a maximum drain-to-source voltage of 60 V, a continuous drain current of 310 mA, and a power dissipation of 280 mW. The device is housed in a compact SC-70-3 package, ensuring a small footprint for space-constrained applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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