2N7002W
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
MOSFET SOT-323 N 60V 0.115A 13.5
MOSFET SOT-323 N 60V 0.115A 13.5
Detailed specification
Detailed specification
N-Channel 60 V 115mA (Ta) 200mW (Ta) surface-mounted SOT-323
N-Channel 60 V 115mA (Ta) 200mW (Ta) surface-mounted SOT-323
Description
Description
The 2N7002W is an N-Channel Enhancement Mode MOSFET in a SOT-323 package, rated for a maximum Drain-Source voltage (VDSS) of 60 V and a continuous Drain current (ID) of 115 mA. It features a low on-state resistance (RDS(on)) of 7.5 Ω at 50 mA and a power dissipation of 200 mW. The device operates with a maximum junction temperature of 150°C, making it suitable for various applications requiring efficient switching and signal processing.
The 2N7002W is an N-Channel Enhancement Mode MOSFET in a SOT-323 package, rated for a maximum Drain-Source voltage (VDSS) of 60 V and a continuous Drain current (ID) of 115 mA. It features a low on-state resistance (RDS(on)) of 7.5 Ω at 50 mA and a power dissipation of 200 mW. The device operates with a maximum junction temperature of 150°C, making it suitable for various applications requiring efficient switching and signal processing.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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