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Manufacturers

2N7002-T1-E3

Manufacturer

SILICONIX

data-sheet
Data sheet
Data sheet
The 2N7002-T1-E3 is designed for use in high-speed circuits, including drivers for relays, solenoids, lamps, displays, and memories. Its low on-resistance and fast switching speed make it ideal for battery-operated systems and solid-state relays, catering to industrial and consumer electronics applications.
Specification
Specification
MOSFET N-CH 60V 115MA TO236
MOSFET N-CH 60V 115MA TO236
Detailed specification
Detailed specification
N-Channel 60 V 115mA (Ta) 200mW (Ta) surface-mounted TO-236
N-Channel 60 V 115mA (Ta) 200mW (Ta) surface-mounted TO-236
Description
Description
The 2N7002-T1-E3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 115mA. It features a low on-state resistance (RDS(on)) of 2.5Ω and a gate threshold voltage (VGS(th)) ranging from 1V to 2.5V. This surface-mounted device is suitable for high-speed switching applications and can be easily driven without a buffer.
The 2N7002-T1-E3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 115mA. It features a low on-state resistance (RDS(on)) of 2.5Ω and a gate threshold voltage (VGS(th)) ranging from 1V to 2.5V. This surface-mounted device is suitable for high-speed switching applications and can be easily driven without a buffer.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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