2N7002PV,115
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
MOSFET 2N-CH 60V 0.35A SOT666
MOSFET 2N-CH 60V 0.35A SOT666
Detailed specification
Detailed specification
Mosfet Array 60V 350mA 330mW surface-mounted SOT-666
Mosfet Array 60V 350mA 330mW surface-mounted SOT-666
Description
Description
The 2N7002PV is a dual N-channel Trench MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 350mA. It features low on-state resistance (RDS(on)) of 1.6Ω at VGS = 10V, making it suitable for high-speed switching applications. Packaged in a compact SOT666 surface mount configuration, it is ideal for relay drivers and low-side load switches.
The 2N7002PV is a dual N-channel Trench MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 350mA. It features low on-state resistance (RDS(on)) of 1.6Ω at VGS = 10V, making it suitable for high-speed switching applications. Packaged in a compact SOT666 surface mount configuration, it is ideal for relay drivers and low-side load switches.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Richard or one of our other skilled sales representatives. They'll help you find the right service option.C