2N7002NXBKR
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 270MA TO236AB
MOSFET N-CH 60V 270MA TO236AB
Detailed specification
Detailed specification
N-Channel 60 V 270mA (Ta), 330mA (Tc) 310mW (Ta), 1.67W (Tc) surface-mounted TO-236AB
N-Channel 60 V 270mA (Ta), 330mA (Tc) 310mW (Ta), 1.67W (Tc) surface-mounted TO-236AB
Description
Description
The 2N7002NXBKR is a N-channel Trench MOSFET with a maximum drain-source voltage of 60 V and a continuous drain current of 270 mA at 25 °C. It features a low on-state resistance (RDS(on)) of 2.2 to 2.8 Ω at VGS = 10 V and is housed in a compact TO-236AB surface-mounted package, making it suitable for high-speed switching applications.
The 2N7002NXBKR is a N-channel Trench MOSFET with a maximum drain-source voltage of 60 V and a continuous drain current of 270 mA at 25 °C. It features a low on-state resistance (RDS(on)) of 2.2 to 2.8 Ω at VGS = 10 V and is housed in a compact TO-236AB surface-mounted package, making it suitable for high-speed switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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