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2N7002LT7G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
The 2N7002LT7G is utilized in various applications within the consumer electronics and automotive domains, particularly in low-power switching and signal amplification tasks. Its compact SOT-23-3 package allows for efficient space utilization in circuit designs, making it ideal for modern electronic devices.
Specification
Specification
MOSFET N-CH 60V 115MA SOT23-3
MOSFET N-CH 60V 115MA SOT23-3
Detailed specification
Detailed specification
N-Channel 60 V 115mA (Tc) 225mW (Ta) surface-mounted SOT-23-3 (TO-236)
N-Channel 60 V 115mA (Tc) 225mW (Ta) surface-mounted SOT-23-3 (TO-236)
Description
Description
The 2N7002LT7G is an N-Channel MOSFET designed for low-power applications, featuring a maximum Drain-Source Voltage of 60 V and a continuous Drain Current of 115 mA at a case temperature of 25°C. It is housed in a compact SOT-23-3 package, suitable for surface mount technology, with a power dissipation of 225 mW at ambient temperature.
The 2N7002LT7G is an N-Channel MOSFET designed for low-power applications, featuring a maximum Drain-Source Voltage of 60 V and a continuous Drain Current of 115 mA at a case temperature of 25°C. It is housed in a compact SOT-23-3 package, suitable for surface mount technology, with a power dissipation of 225 mW at ambient temperature.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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