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2N7002LT3G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
2N7002LT3G is suitable for industrial and consumer electronics applications, particularly in low-power switching and signal amplification. Its compact SOT-23-3 package allows for efficient use in space-constrained designs, making it ideal for various electronic circuits requiring reliable performance.
Specification
Specification
MOSFET N-CH 60V 115MA SOT23-3
MOSFET N-CH 60V 115MA SOT23-3
Detailed specification
Detailed specification
N-Channel 60 V 115mA (Tc) 225mW (Ta) surface-mounted SOT-23-3 (TO-236)
N-Channel 60 V 115mA (Tc) 225mW (Ta) surface-mounted SOT-23-3 (TO-236)
Description
Description
The 2N7002LT3G is an N-Channel MOSFET designed for low-voltage applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA at a case temperature of 25°C. The device is housed in a SOT-23-3 package, providing a compact footprint for surface-mounted applications.
The 2N7002LT3G is an N-Channel MOSFET designed for low-voltage applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA at a case temperature of 25°C. The device is housed in a SOT-23-3 package, providing a compact footprint for surface-mounted applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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