2N7002LT1G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 115MA SOT23-3
MOSFET N-CH 60V 115MA SOT23-3
Detailed specification
Detailed specification
N-Channel 60 V 115mA (Tc) 225mW (Ta) surface-mounted SOT-23-3 (TO-236)
N-Channel 60 V 115mA (Tc) 225mW (Ta) surface-mounted SOT-23-3 (TO-236)
Description
Description
The 2N7002LT1G is an N-Channel MOSFET designed for low-voltage applications. It features a maximum Drain-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 115 mA at a case temperature (Tc) of 25°C. This device is housed in a SOT-23-3 package, providing a compact surface mount solution for efficient power management.
The 2N7002LT1G is an N-Channel MOSFET designed for low-voltage applications. It features a maximum Drain-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 115 mA at a case temperature (Tc) of 25°C. This device is housed in a SOT-23-3 package, providing a compact surface mount solution for efficient power management.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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