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Manufacturers

2N7002K-T1-GE3

Manufacturer

SILICONIX

data-sheet
Data sheet
Data sheet
2N7002K-T1-GE3 is suitable for applications in industrial and consumer electronics, including direct logic-level interfaces for TTL/CMOS, drivers for relays, solenoids, and solid-state relays, as well as battery-operated systems. Its low on-resistance and fast switching capabilities make it ideal for high-speed circuits.
Specification
Specification
MOSFET N-CH 60V 300MA TO236
MOSFET N-CH 60V 300MA TO236
Detailed specification
Detailed specification
N-Channel 60 V 300mA (Ta) 350mW (Ta) surface-mounted SOT-23-3 (TO-236)
N-Channel 60 V 300mA (Ta) 350mW (Ta) surface-mounted SOT-23-3 (TO-236)
Description
Description
The 2N7002K-T1-GE3 is an N-Channel MOSFET with a maximum drain-source voltage of 60 V and a continuous drain current of 300 mA. It features a low on-state resistance (RDS(on)) of 2 Ω, a low threshold voltage of 2 V (typ.), and a fast switching speed of 25 ns. This surface-mounted device is ideal for high-speed applications and direct logic-level interfacing.
The 2N7002K-T1-GE3 is an N-Channel MOSFET with a maximum drain-source voltage of 60 V and a continuous drain current of 300 mA. It features a low on-state resistance (RDS(on)) of 2 Ω, a low threshold voltage of 2 V (typ.), and a fast switching speed of 25 ns. This surface-mounted device is ideal for high-speed applications and direct logic-level interfacing.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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