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2N7002KT1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
The 2N7002KT1G is designed for use in low side load switching, level shift circuits, and DC-DC converters, making it suitable for applications in consumer electronics, automotive, and portable devices. Its compact SOT-23-3 package allows for efficient space utilization in modern electronic designs.
Specification
Specification
MOSFET N-CH 60V 320MA SOT23-3
MOSFET N-CH 60V 320MA SOT23-3
Detailed specification
Detailed specification
N-Channel 60 V 320mA (Ta) 300mW (Ta) surface-mounted SOT-23-3 (TO-236)
N-Channel 60 V 320mA (Ta) 300mW (Ta) surface-mounted SOT-23-3 (TO-236)
Description
Description
The 2N7002KT1G is an N-Channel MOSFET with a maximum Drain-Source Voltage of 60V and a continuous Drain Current of 320mA. It features low RDS(on) values, making it suitable for efficient switching applications. Packaged in a SOT-23-3 surface mount configuration, it is ideal for low side load switching, level shifting, and DC-DC converters in portable devices.
The 2N7002KT1G is an N-Channel MOSFET with a maximum Drain-Source Voltage of 60V and a continuous Drain Current of 320mA. It features low RDS(on) values, making it suitable for efficient switching applications. Packaged in a SOT-23-3 surface mount configuration, it is ideal for low side load switching, level shifting, and DC-DC converters in portable devices.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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