2N7002K-T1-E3
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 300MA SOT23-3
MOSFET N-CH 60V 300MA SOT23-3
Detailed specification
Detailed specification
N-Channel 60 V 300mA (Ta) 350mW (Ta) surface-mounted SOT-23-3 (TO-236)
N-Channel 60 V 300mA (Ta) 350mW (Ta) surface-mounted SOT-23-3 (TO-236)
Description
Description
The 2N7002K-T1-E3 is an N-Channel MOSFET with a maximum drain-source voltage of 60V and continuous drain current of 300mA. It features low on-resistance of 2Ω, low threshold voltage of 2V (typ.), and fast switching speed of 25ns. This surface-mounted device is ideal for high-speed applications and direct logic-level interfacing.
The 2N7002K-T1-E3 is an N-Channel MOSFET with a maximum drain-source voltage of 60V and continuous drain current of 300mA. It features low on-resistance of 2Ω, low threshold voltage of 2V (typ.), and fast switching speed of 25ns. This surface-mounted device is ideal for high-speed applications and direct logic-level interfacing.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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