2N7002HSX
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
MOSFET 2N-CH 60V 0.32A 6TSSOP
MOSFET 2N-CH 60V 0.32A 6TSSOP
Detailed specification
Detailed specification
Mosfet Array 60V 320mA (Ta) 420mW surface-mounted 6-TSSOP
Mosfet Array 60V 320mA (Ta) 420mW surface-mounted 6-TSSOP
Description
Description
The 2N7002HSX is a dual N-channel Trench MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 320mA. It features low on-state resistance (RDS(on)) of 1.6Ω at VGS = 10V and is housed in a compact 6-TSSOP package, making it suitable for space-constrained applications.
The 2N7002HSX is a dual N-channel Trench MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 320mA. It features low on-state resistance (RDS(on)) of 1.6Ω at VGS = 10V and is housed in a compact 6-TSSOP package, making it suitable for space-constrained applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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