2N7002HR
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
2N7002H/SOT23/TO-236AB
2N7002H/SOT23/TO-236AB
Detailed specification
Detailed specification
N-Channel 60 V 300mA (Tc) 830mW (Tc) surface-mounted TO-236AB
N-Channel 60 V 300mA (Tc) 830mW (Tc) surface-mounted TO-236AB
Description
Description
The 2N7002H is an N-channel enhancement mode MOSFET in a SOT23 package, featuring a maximum drain-source voltage of 60 V and a continuous drain current of 360 mA at VGS = 10 V. It offers low on-state resistance (RDS(on)) of 1.6 Ω and fast switching capabilities, making it suitable for various applications.
The 2N7002H is an N-channel enhancement mode MOSFET in a SOT23 package, featuring a maximum drain-source voltage of 60 V and a continuous drain current of 360 mA at VGS = 10 V. It offers low on-state resistance (RDS(on)) of 1.6 Ω and fast switching capabilities, making it suitable for various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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