2N7002/HAMR
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 300MA TO236AB
MOSFET N-CH 60V 300MA TO236AB
Detailed specification
Detailed specification
N-Channel 60 V 300mA (Tc) 830mW (Tc) surface-mounted TO-236AB
N-Channel 60 V 300mA (Tc) 830mW (Tc) surface-mounted TO-236AB
Description
Description
The 2N7002 is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage of 60 V and a continuous drain current of 300 mA. It is housed in a TO-236AB surface-mounted package and utilizes Trench MOSFET technology for fast switching performance. The device is suitable for logic level gate drive applications.
The 2N7002 is an N-channel enhancement mode MOSFET featuring a maximum drain-source voltage of 60 V and a continuous drain current of 300 mA. It is housed in a TO-236AB surface-mounted package and utilizes Trench MOSFET technology for fast switching performance. The device is suitable for logic level gate drive applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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