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2N7002ET7G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
The 2N7002ET7G is designed for use in low side load switching, level shift circuits, and DC-DC converters. Its compact SOT-23-3 package and low on-state resistance make it suitable for portable applications such as digital still cameras, PDAs, and cell phones, as well as automotive applications requiring AEC-Q101 qualification.
Specification
Specification
MOSFET N-CH 60V 260MA SOT23-3
MOSFET N-CH 60V 260MA SOT23-3
Detailed specification
Detailed specification
N-Channel 60 V 260mA (Ta) 300mW (Tj) surface-mounted SOT-23-3 (TO-236)
N-Channel 60 V 260mA (Ta) 300mW (Tj) surface-mounted SOT-23-3 (TO-236)
Description
Description
The 2N7002ET7G is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (VDSS) of 60V and a continuous Drain Current (ID) of 260mA at 25°C. It features low RDS(on) values, making it suitable for low side load switching and DC-DC converters. Packaged in a compact SOT-23-3 surface mount configuration, it is ideal for portable applications.
The 2N7002ET7G is an N-Channel MOSFET with a maximum Drain-to-Source Voltage (VDSS) of 60V and a continuous Drain Current (ID) of 260mA at 25°C. It features low RDS(on) values, making it suitable for low side load switching and DC-DC converters. Packaged in a compact SOT-23-3 surface mount configuration, it is ideal for portable applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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