2N7002ET1G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 260MA SOT23-3
MOSFET N-CH 60V 260MA SOT23-3
Detailed specification
Detailed specification
N-Channel 60 V 260mA (Ta) 300mW (Tj) surface-mounted SOT-23-3 (TO-236)
N-Channel 60 V 260mA (Ta) 300mW (Tj) surface-mounted SOT-23-3 (TO-236)
Description
Description
The 2N7002ET1G is an N-Channel MOSFET with a maximum Drain-to-Source Voltage of 60 V and a continuous Drain Current of 260 mA. It features low RDS(on) and is housed in a compact SOT-23-3 package. This device is suitable for low side load switching, level shifting, and DC-DC conversion applications, making it ideal for portable electronics.
The 2N7002ET1G is an N-Channel MOSFET with a maximum Drain-to-Source Voltage of 60 V and a continuous Drain Current of 260 mA. It features low RDS(on) and is housed in a compact SOT-23-3 package. This device is suitable for low side load switching, level shifting, and DC-DC conversion applications, making it ideal for portable electronics.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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