2N7002E-T1-E3
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 240MA SOT23-3
MOSFET N-CH 60V 240MA SOT23-3
Detailed specification
Detailed specification
N-Channel 60 V 240mA (Ta) 350mW (Ta) surface-mounted SOT-23-3 (TO-236)
N-Channel 60 V 240mA (Ta) 350mW (Ta) surface-mounted SOT-23-3 (TO-236)
Description
Description
The 2N7002E-T1-E3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60 V and a continuous Drain Current (ID) of 240 mA. It features a low on-resistance (RDS(on)) of 3 Ω, a low threshold voltage of 2 V (typ.), and fast switching speed of 7.5 ns. This device is housed in a SOT-23-3 package and is suitable for low-voltage applications.
The 2N7002E-T1-E3 is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 60 V and a continuous Drain Current (ID) of 240 mA. It features a low on-resistance (RDS(on)) of 3 Ω, a low threshold voltage of 2 V (typ.), and fast switching speed of 7.5 ns. This device is housed in a SOT-23-3 package and is suitable for low-voltage applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Christian or one of our other skilled sales representatives. They'll help you find the right service option.C